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| Freescale Semiconductor Technical Data Document Number: MMG3015NT1 Rev. 1, 4/2008 Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3015NT1 is a General Purpose Amplifier that is internally Input and output matched. It is designed for a broad range of Class A, small - signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF. Features * Frequency: 0 - 6000 MHz * P1dB: 20.5 dBm @ 900 MHz * Small Signal Gain: 15.5 dB @ 900 MHz * Third Order Output Intercept Point: 36 dBm @ 900 MHz * Single 5 Volt Supply * Active Bias * Internally Matched to 50 Ohms * Low Cost SOT - 89 Surface Mount Package * RoHS Compliant * In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel. MMG3015NT1 0 - 6000 MHz, 15.5 dB 20.5 dBm InGaP HBT 12 3 CASE 1514 - 02, STYLE 1 SOT - 89 PLASTIC Table 1. Typical Performance (1) Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @1dB Compression Third Order Output Intercept Point Symbol Gp IRL ORL P1db IP3 900 MHz 15.5 - 15 - 13 20.5 36 2140 MHz 14.5 - 19 -9 20.5 33.5 3500 MHz 12.5 - 19 -7 18.5 30.5 Unit dB dB dB dBm dBm Table 2. Maximum Ratings Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature (2) Symbol VCC ICC Pin Tstg TJ Value 7 300 12 - 65 to +150 150 Unit V mA dBm C C 2. For reliable operation, the junction temperature should not exceed 150C. 1. VCC = 5 Vdc, TC = 25C, 50 ohm system Table 3. Thermal Characteristics (VCC = 5 Vdc, ICC = 95 mA, TC = 25C) Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (3) 41.5 Unit C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2007-2008. All rights reserved. MMG3015NT1 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TC = 25C, 50 ohm system, in Freescale Application Circuit) Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @ 1dB Compression Third Order Output Intercept Point Noise Figure Supply Current (1) Supply Voltage (1) Symbol Gp IRL ORL P1dB IP3 NF ICC VCC Min 14 -- -- -- -- -- 80 -- Typ 15.5 - 15 - 13 20.5 36 5.6 95 5 Max -- -- -- -- -- -- 120 -- Unit dB dB dB dBm dBm dB mA V 1. For reliable operation, the junction temperature should not exceed 150C. MMG3015NT1 2 RF Device Data Freescale Semiconductor Table 5. Functional Pin Description Pin Number 1 2 3 RFin Ground RFout/DC Supply 1 Pin Function 2 2 3 Figure 1. Functional Diagram Table 6. ESD Protection Characteristics Test Methodology Human Body Model (per JESD 22 - A114) Machine Model (per EIA/JESD 22 - A115) Charge Device Model (per JESD 22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit C MMG3015NT1 RF Device Data Freescale Semiconductor 3 50 OHM TYPICAL CHARACTERISTICS 18 Gp, SMALL-SIGNAL GAIN (dB) TC = 85C 16 -40C 25C 0 -5 S22 S11, S22 (dB) 14 -10 S11 -15 12 10 VCC = 5 Vdc 8 0 1 2 3 4 5 6 f, FREQUENCY (GHz) -20 VCC = 5 Vdc ICC = 95 mA 0 1 2 3 4 5 6 -25 f, FREQUENCY (GHz) Figure 2. Small - Signal Gain (S21) versus Frequency 16 P1dB, 1 dB COMPRESSION POINT (dBm) 900 MHz Gp, SMALL-SIGNAL GAIN (dB) 15 1960 MHz 14 13 3500 MHz 12 11 10 10 VCC = 5 Vdc ICC = 95 mA 12 14 16 18 20 22 2600 MHz 2140 MHz 22 21 20 19 18 17 16 15 14 Figure 3. Input/Output Loss versus Frequency VCC = 5 Vdc ICC = 95 mA 0.5 1 1.5 2 2.5 3 3.5 Pout, OUTPUT POWER (dBm) f, FREQUENCY (GHz) Figure 4. Small - Signal Gain versus Output Power IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 160 ICC, COLLECTOR CURRENT (mA) 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 VCC, COLLECTOR VOLTAGE (V) 38 36 34 32 30 28 26 0 Figure 5. P1dB versus Frequency VCC = 5 Vdc ICC = 95 mA 1 MHz Tone Spacing 1 2 f, FREQUENCY (GHz) 3 4 Figure 6. Collector Current versus Collector Voltage Figure 7. Third Order Output Intercept Point versus Frequency MMG3015NT1 4 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 38 IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 38 37 37 36 36 35 35 34 f = 900 MHz 1 MHz Tone Spacing 33 4.8 4.9 5 5.1 5.2 34 33 -40 VCC = 5 Vdc f = 900 MHz 1 MHz Tone Spacing -20 0 20 40 60 80 100 VCC, COLLECTOR VOLTAGE (V) T, TEMPERATURE (_C) Figure 8. Third Order Output Intercept Point versus Collector Voltage -20 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -30 MTTF (YEARS) 105 Figure 9. Third Order Output Intercept Point versus Case Temperature -40 104 -50 VCC = 5 Vdc ICC = 95 mA f = 900 MHz 1 MHz Tone Spacing -60 -70 5 10 15 20 Pout, OUTPUT POWER (dBm) 103 120 125 130 135 140 145 150 TJ, JUNCTION TEMPERATURE (C) NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 95 mA Figure 10. Third Order Intermodulation versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) Figure 11. MTTF versus Junction Temperature -20 VCC = 5 Vdc, ICC = 95 mA, f = 2140 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) 8 NF, NOISE FIGURE (dB) 6 -30 -40 4 -50 2 VCC = 5 Vdc ICC = 95 mA 0 0 1 2 f, FREQUENCY (GHz) 3 4 -60 -70 2 4 6 8 10 12 14 16 18 20 Pout, OUTPUT POWER (dBm) Figure 12. Noise Figure versus Frequency Figure 13. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power MMG3015NT1 RF Device Data Freescale Semiconductor 5 50 OHM APPLICATION CIRCUIT: 40- 800 MHz VSUPPLY R1 C3 L1 RF INPUT DUT C4 Z1 C1 Z2 Z3 Z4 C2 Z5 RF OUTPUT VCC Z4 PCB Z1, Z5 Z2 Z3 0.347 x 0.058 Microstrip 0.575 x 0.058 Microstrip 0.172 x 0.058 Microstrip 0.403 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1 Figure 14. 50 Ohm Test Circuit Schematic 20 10 S21, S11, S22 (dB) 0 -10 -20 S22 -30 -40 0 200 400 f, FREQUENCY (MHz) 600 800 VCC = 5 Vdc ICC = 95 mA S11 C1 L1 C2 S21 R1 C4 C3 MMG30XX Rev 2 Figure 15. S21, S11 and S22 versus Frequency Figure 16. 50 Ohm Test Circuit Component Layout Table 8. 50 Ohm Test Circuit Component Designations and Values Part C1, C2 C3 C4 L1 R1 Description 0.01 F Chip Capacitors 0.1 F Chip Capacitor 1 F Chip Capacitor 470 nH Chip Inductor 0 W, 1/10 W Chip Resistor Part Number C0603C103J5RAC C0603C104J5RAC C0603C105J5RAC BK2125HM471 - T CRCW06030000FKEA Manufacturer Kemet Kemet Kemet Taiyo Yuden Vishay MMG3015NT1 6 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 800 - 3600 MHz VSUPPLY R1 C3 L1 RF INPUT DUT C4 Z1 C1 Z2 Z3 Z4 C2 Z5 RF OUTPUT VCC Z4 PCB Z1, Z5 Z2 Z3 0.347 x 0.058 Microstrip 0.575 x 0.058 Microstrip 0.172 x 0.058 Microstrip 0.403 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1 Figure 17. 50 Ohm Test Circuit Schematic 30 20 S21, S11, S22 (dB) 10 0 -10 -20 -30 800 S22 S11 VCC = 5 Vdc ICC = 95 mA 1200 1600 2000 2400 2800 3200 3600 MMG30XX Rev 2 C1 L1 C2 S21 R1 C4 C3 f, FREQUENCY (MHz) Figure 18. S21, S11 and S22 versus Frequency Figure 19. 50 Ohm Test Circuit Component Layout Table 9. 50 Ohm Test Circuit Component Designations and Values Part C1, C2 C3 C4 L1 R1 Description 150 pF Chip Capacitors 0.1 F Chip Capacitor 1 F Chip Capacitor 56 nH Chip Inductor 0 W, 1/10 W Chip Resistor Part Number C0603C151J5RAC C0603C104J5RAC C0603C105J5RAC HK160856NJ - T CRCW06030000FKEA Manufacturer Kemet Kemet Kemet Taiyo Yuden Vishay MMG3015NT1 RF Device Data Freescale Semiconductor 7 50 OHM TYPICAL CHARACTERISTICS Table 10. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 95 mA, TC = 25C, 50 Ohm System) f MHz 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1900 2150 2400 2650 2900 2950 3000 3050 3100 3150 3200 3250 3300 3350 S11 |S11| 0.28 0.28 0.27 0.27 0.27 0.26 0.26 0.26 0.26 0.26 0.25 0.25 0.25 0.25 0.25 0.24 0.24 0.24 0.24 0.24 0.24 0.24 0.24 0.24 0.24 0.23 0.23 0.23 0.23 0.23 0.24 0.25 0.26 0.28 0.28 0.28 0.28 0.29 0.29 0.29 0.29 0.29 0.29 174.23 172.92 171.92 170.57 169.49 168.53 167.16 165.92 164.77 163.38 162.57 161.36 160.35 159.29 158.03 157.14 156.02 154.89 153.09 152.30 151.41 150.63 150.09 149.52 149.15 148.71 147.76 146.51 145.11 138.41 132.77 128.41 124.16 119.27 118.39 117.49 116.75 116.03 115.21 114.41 113.69 112.97 112.24 |S21| 6.17 6.16 6.15 6.14 6.12 6.11 6.10 6.08 6.06 6.05 6.03 6.01 5.99 5.97 5.95 5.93 5.91 5.88 5.83 5.80 5.77 5.75 5.72 5.69 5.67 5.65 5.62 5.60 5.57 5.41 5.23 5.05 4.87 4.69 4.65 4.62 4.59 4.55 4.52 4.48 4.44 4.41 4.37 S21 171.48 169.36 167.25 165.15 163.07 160.97 158.87 156.78 154.73 152.65 150.58 148.53 146.50 144.45 142.41 140.38 138.38 136.37 132.34 130.37 128.39 126.41 124.46 122.50 120.54 118.61 116.65 114.72 112.79 103.23 93.77 84.48 75.21 66.04 64.24 62.43 60.59 58.77 56.97 55.15 53.36 51.59 49.84 |S12| 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 S12 - 2.66 - 3.32 - 3.93 - 4.60 - 5.22 - 5.85 - 6.50 - 7.14 - 7.76 - 8.41 - 9.03 - 9.64 - 10.26 - 10.88 - 11.52 - 12.14 - 12.78 - 13.38 - 14.64 - 15.28 - 15.94 - 16.57 - 17.17 - 17.81 - 18.46 - 19.07 - 19.73 - 20.39 - 21.04 - 24.38 - 27.79 - 31.33 - 35.09 - 39.03 - 39.86 - 40.65 - 41.48 - 42.33 - 43.16 - 44.01 - 44.83 - 45.67 - 46.48 |S22| 0.06 0.07 0.08 0.09 0.09 0.10 0.11 0.12 0.13 0.14 0.14 0.15 0.16 0.17 0.18 0.18 0.19 0.20 0.21 0.22 0.22 0.23 0.24 0.24 0.25 0.26 0.26 0.27 0.28 0.31 0.35 0.38 0.40 0.43 0.44 0.44 0.45 0.46 0.46 0.47 0.48 0.48 0.49 S22 - 43.26 - 50.81 - 56.75 - 62.45 - 67.13 - 71.09 - 74.88 - 77.99 - 81.75 - 85.06 - 88.16 - 91.28 - 93.96 - 96.90 - 99.99 - 102.70 - 105.47 - 108.27 - 114.23 - 117.17 - 120.26 - 123.42 - 126.34 - 129.61 - 132.32 - 134.63 - 136.77 - 138.90 - 141.13 - 152.46 - 163.83 - 175.54 172.45 161.50 159.35 157.23 154.83 152.37 150.02 147.68 145.58 143.48 141.43 (continued) MMG3015NT1 8 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS Table 10. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 95 mA, TC = 25C, 50 Ohm System) (continued) f MHz 3400 3450 3500 3550 3600 S11 |S11| 0.29 0.29 0.29 0.29 0.29 111.50 110.37 109.50 108.57 107.57 |S21| 4.34 4.30 4.27 4.23 4.20 S21 48.07 45.96 44.53 42.83 41.14 |S12| 0.09 0.09 0.09 0.09 0.09 S12 - 47.31 - 48.32 - 49.01 - 49.82 - 50.64 |S22| 0.49 0.50 0.50 0.51 0.52 S22 139.46 137.08 135.57 133.81 132.08 MMG3015NT1 RF Device Data Freescale Semiconductor 9 1.7 7.62 0.305 diameter 3.48 5.33 1.27 1.27 0.86 0.64 3.86 0.58 2.49 2.54 Recommended Solder Stencil NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN. 3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE. 4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM PITCH. Figure 20. Recommended Mounting Configuration MMG3015NT1 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MMG3015NT1 RF Device Data Freescale Semiconductor 11 MMG3015NT1 12 RF Device Data Freescale Semiconductor MMG3015NT1 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3100: General Purpose Amplifier Biasing REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 Date Aug. 2007 Apr. 2008 * Initial Release of Data Sheet * Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings, p. 1 * Corrected Fig. 13, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis (ACPR) unit of measure to dBc, p. 5 Description * Updated Part Numbers in Tables 8, 9, Component Designations and Values, to latest RoHS compliant part numbers, p. 6, 7 MMG3015NT1 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2007-2008. All rights reserved. MMG3015NT1 Document Number: RF Device Data MMG3015NT1 Rev. 1, 4/2008 Freescale Semiconductor 15 |
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